All-Chemical Vapor Deposited Graphene/Silicon Nitride TFTs

摘要

All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm~2V~(-1)s~(-1) have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through all-chemical vapor deposition processes.