Transparent oxide semiconductors have been studied extensively as active layers in thin film transistors (TFTs) due to potential advantages compared to hydrogenated amorphous silicon and organic semiconductors [1], However, most oxide semiconductor based TFTs are fabricated by vacuum deposition techniques, such as pulsed laser deposition, and RF magnetron sputtering, DC sputtering, and plasma enhanced chemical vapor deposition. Recently, there is increased interest in the development of solution processed oxide semiconductors as a low cost alternative to conventional vacuum and vapor-processing techniques [2-4]. In our previous work, we have developed a general and low-cost solution-based route to form high-mobility metal oxide materials as channel layers for TFTs [5-8]. However, high annealing temperatures were necessary in this prior study. In this paper we demonstrate the formation of high-performance, solution-processed oxide-based thin films transistors at significantly lower processing temperatures (<300 °C).
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