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Direct Nitridation of Aluminum Compacts at Low Temperature High Nitrogen Pressure

机译:低温高氮压力下铝块的直接氮化

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Direct nitridation of Al powder compactswith relative density of about 65percent was performedat 580 deg C, about 80 deg C below the melting pointof Al, and under nitrogen pressures of 4 and 7 MPa.In all eases, almost 100 percent nitridation wasachieved. The structure of the AlN products wasdrastically affected by the reaction conditions. Inhigh nitrogen pressure, the nitridation proceededrapidly, and the generated AlN exhibited a three-layerstructure, in which the inner layer was densified, andthe outer layers were porous with small particles ofa few #mu# m or less. It is considered that thisdensification and particle growth were caused by largeheat of nitridation reaction. However, in the caseof low nitrogen pressure, such phenomenon was notobserved. The nitriding at low temperature and thepre-heating in vacuum caused higher conversion ratiobecause of decreasing surface oxide or nitride layer.
机译:直接氮化Al粉末尺寸的相对密度约65平方,在熔点下的580℃,约80℃下进行,在4和7 MPa的氮气压力下。在所有简易装置中,几乎100%的氮化分布。 ALN产品的结构受到反应条件的影响。 Inhigh的氮气压力,氮化术后,并且所产生的ALN表现出三层结构,其中致密化内层,并且外层是多孔的,小颗粒,少数#mu#m或更低。认为该致敏和颗粒生长是由氮化反应的大氢气引起的。然而,在低氮压力的情况下,这种现象被效果不足。在低温和真空中的氮化下的氮化导致降低表面氧化物或氮化物层的转化率较高。

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