The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

摘要

We describe the metal-organic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500/spl deg/C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH/sub 3/, and PH/sub 3/. By changing the layer thickness and composition we have prepared structures with low temperature (/spl les/20 K) photoluminescence wavelengths ranging from 3.2 to 5.0 /spl mu/m. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An InAsSb/InAsP SLS injection laser emitted at 3.3 /spl mu/m at 80 K with peak power of 100 mW.