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Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

机译:使用双光子光束诱导电流方法的硅倒装芯片的三维纳米副表面成像

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摘要

By implementing two-photon optical-beam-induced-current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height.
机译:通过使用固体浸没透镜实现双光子光学光束诱导电流显微镜,报告了硅倒装芯片内的成像,其具有166nm的横向分辨率,并且能够在高度100nm中解析特征的轴向分辨率。

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