FIB Backside Circuit Modification at the Device Level, Allowing Access to Every Circuit Node with Minimum Impact on Device Performance by Use of Atomic Force Probing

摘要

Direct measurements of circuit node signals without changing the performance of the circuitry are essential in modern FA but often impossible for recent IC technologies. This paper shows new methods, based on FIB backside circuit edit, allowing access to every existing circuit node at the device level, and discusses options for probing and discrete characterization.