Material and doping contrast in semiconductor devices at nanoscale resolution using scattering-type scanning near-field optical microscopy

摘要

The usefulness of scattering-type near-field optical microscopy for mapping the material and doping in microelectronic devices at nanoscale resolution is demonstrated. Both amplitude and phase of infrared (lambda velence 10.7 (mu)m) laser light scattered by a metallised, vibrating AFM tip scanned a few nanometers above the sample are detected and transformed into images showing contrast of materials, as well as of doping concentration. Cross-sections through layers as thin as 20 nm (?/500) have been clearly imaged.