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New mechanism of initiation of negative differential resistance in the structures based on p-n junctions on exposure to microwave radiation

机译:基于P-N结辐射到微波辐射的结构中负差分阻力的新机制

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The results of theoretical and experimental investigations of the effect of initiation of negative differential resistance on the current-voltage characteristics for diode structures based on p-n-junctions on exposure to high-level power microwave radiation are presented. Under theoretical analysis of the influence of high-level microwave power on the form of I-V characteristics the change of direct current in the diode because of detector effect, the warming up of free charge carriers and nonlinear characteristics of microwave signal reflection from semiconductor structures are considered.
机译:介绍了对基于P-N结辐射的二极管结构对电流差异电流 - 电压特性的理论和实验研究的结果。在理论上分析了高级微波功率对IV特性形式的影响,由于检测器效应,二极管中直流电的变化,考虑了自由电荷载流子的热热载波和从半导体结构的微波信号反射的非线性特性的热化。

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