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New mechanism of initiation of negative differential resistance in the structures based on p-n junctions on exposure to microwave radiation

机译:暴露于微波辐射下基于p-n结的结构中引发负差分电阻的新机制

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The results of theoretical and experimental investigations of the effect of initiation of negative differential resistance on the current-voltage characteristics for diode structures based on p-n-junctions on exposure to high-level power microwave radiation are presented. Under theoretical analysis of the influence of high-level microwave power on the form of I-V characteristics the change of direct current in the diode because of detector effect, the warming up of free charge carriers and nonlinear characteristics of microwave signal reflection from semiconductor structures are considered.
机译:提出了理论上和实验上对负差分电阻的影响对基于p-n结的二极管结构暴露于高功率微波辐射的电流-电压特性的影响的理论和实验研究的结果。在理论上分析了高功率微波功率对IV特性形式的影响,由于检测器效应,二极管中的直流电发生了变化,考虑了自由电荷载流子的预热和半导体结构反射的微波信号的非线性特性。

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