Reactive ion etching of indium tin oxide-HBr chemistry

摘要

Reactive ion etching of indium tin oxide using HBr/CH_4 feed gas at a raised temperature, e. g., 250 deg C, has been studied. The influence of process parameters, such as feed gas composition, power, and temperature, on etch rate was examined. The loading factor effect, which is a function of the CH_4 concentration, the photoresist pattern, and the substrate temperature, has also been studied. Surface reactions are not only enhanced by the high substrate temperature but also selective between indium and tin metals. In the low CH_4 concentration range, metal removal is the bottleneck step of the etch process even at high temperature.