Realization conditions of the moisture - sensitivity mechanisms of MOS tunnel structures

摘要

The paper presents the results for determining the realization conditions of the moisture sensitivity mechanisms of metal-tunneling silicon oxide-silicon structures. The increase in the measured capacitance of the structures with the increase inthe air humidity is shown in a general case to be connected with water molecules adsorption by the thin porous oxide layer, which leads to the increase in the permittivity of the layer on one hand, and to a change of the charge state near the silicon -oxide interface on the other Prevalence of one mechanism over the other depends on the electrical bias mode at the MOS tunnel structure.