We report recent experimental results on impurity gettering in silicon obtained by combining macroscopic techniques like tracer measurements or SIMS and microscopic investigations using Moessbauer spectroscopy or analytical and high-resolution electron microscopy. The latter provide insight into structural properties of gettering sites while the former allow to measure the redistribution kinetics of metal impurities during gettering which provides indispensible informations for quantitative simulations of gettering processes.
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