【24h】

Holography in porous silicon

机译:多孔硅的全息术

获取原文

摘要

Holographic structures have been obtained in porous silicon (PS) by photodissolution of the material in hydrofluoric acid under interferometric illumination. This process can be performed after or during the formation of the PS layer. 1 or 2D structures have been easily etched down to the submicron range. The photosensitivity is demonstrated for the entire visible range. Since the dissolution process occurs in the builk ,the thickness of the structure is only determined by the penetration depth of the light in the material, which in the case of PS is about 0.1 #mu# m to 15 #mu# m (from UV to 600 nm).
机译:通过在干涉式照射下的氢氟酸中的材料的光调凝结在多孔硅(PS)中获得全息结构。该过程可以在PS层的形成之后或期间执行。 1或2D结构已经容易地蚀刻到亚微米范围。对于整个可见范围,对光敏性进行了说明。由于在Builk中发生溶出过程,因此结构的厚度仅由材料中的光的渗透深度决定,这在PS的情况下为约0.1#mu#m至15#mu#m(来自UV到600 nm)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号