Holographic structures have been obtained in porous silicon (PS) by photodissolution of the material in hydrofluoric acid under interferometric illumination. This process can be performed after or during the formation of the PS layer. 1 or 2D structures have been easily etched down to the submicron range. The photosensitivity is demonstrated for the entire visible range. Since the dissolution process occurs in the builk ,the thickness of the structure is only determined by the penetration depth of the light in the material, which in the case of PS is about 0.1 #mu# m to 15 #mu# m (from UV to 600 nm).
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