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Holography in porous silicon

机译:多孔硅全息图

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摘要

Holographic structures have been obtained in porous silicon (PS) by photodissolution of the material in hydrofluoric acid under interferometric illumination. This process can be performed after or during the formation of the PS layer. 1 or 2D structures have been easily etched down to the submicron range. The photosensitivity is demonstrated for the entire visible range. Since the dissolution process occurs in the builk ,the thickness of the structure is only determined by the penetration depth of the light in the material, which in the case of PS is about 0.1 #mu# m to 15 #mu# m (from UV to 600 nm).
机译:通过在干涉照明下将材料在氢氟酸中进行光溶解,可以在多孔硅(PS)中获得全息结构。可以在形成PS层之后或之中执行该过程。 1或2D结构很容易被蚀刻到亚微米范围。在整个可见光范围内都证明了光敏性。由于溶解过程发生在容器中,因此结构的厚度仅取决于光在材料中的穿透深度,在PS的情况下约为0.1#mu#m至15#mu#m(来自紫外线)至600 nm)。

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