Optical properties of InAlAs/InP type II heterostructures grown on (111)B InP substrates

摘要

Optical properties were studied for InAlAs/InP type II heterostructures grown on (111)B InP substrates by gas source molecular beam epitaxy. It was found that the photoluminescence (PL) intensity from the INAlAs/InP type II heterointerface for the sample grown on (111)B substrates was about one order stronger than that for the sample grown on (100) substrates. The two dimensional (2D) electron mobility was laerger and the sheet carrier density was lower in the sample grown on (111)B substrates. The results of transmission electron micoscopy (TEM) suggest that the interface quality is better for the (11)B sample than that for the (100) sample.