首页> 外文会议>International symposium on compound semiconductors >Identification of Mn and Ni trace impurities in GaN crystals by electron paramagnetic resonance.
【24h】

Identification of Mn and Ni trace impurities in GaN crystals by electron paramagnetic resonance.

机译:电子顺磁共振识别GaN晶体中的Mn和Ni痕量杂质。

获取原文

摘要

We report on the observation of electron paramagnetic resonance of manganese and nickel trace impurities in bulk GaN crystals gown by the sublimation sandwich method. The resolved hyperfine structure due to interaction wioth ~(55)Mn (1 chemical bounds 5/2) nuclei has been observed in GaN, allowing nuambiguous identification of the impurity. Manganese and nickel exist in Mn~(2+) (3d~( delta ) and Ni~(3+) (3d~7) charge states with electron spin S chemical bounds 1.999, A chemical bounds 70.10~(-4) cm~(-1) and fine structure parameter |D| chemical bounds 240 centre dot 10~(-4) cm~(-4). The EPR spectrum of Ni~(3+) in GaN has the characteristic anisotropy of an S chemical bounds 3/2 system in a strong axial crystalline field. The effective g-factor values were found to be g||~/ chemical bounds 2.10 and perpendicular ~/ approx = 4.20 for a system with an effective spin S~/ chemical bounds 1/2. An analogy was revealed between the parameters of M~(2=) and Ni~(3+) in GaN and ZnO crystals. The zero-phonon line at 1.047 eV seems to belong to the transition ~4T_2(F)-~4A_2(F) within 3dlevels of Ni~(3+) ion with a 3d~7 electronic configuration.
机译:升华夹心法在散装夹心法中的散装GaN晶体中锰和镍痕量杂质的观察结果报告。在GaN中观察到由于相互作用〜(55)Mn(1化学界5/2)核而导致的已解决的高血清结构,允许杂质鉴定杂质。锰和镍存在于Mn〜(2+)(3D〜(Delta)和Ni〜(3+)(3D〜7)充电状态1.999,化学界限70.10〜(-4)cm〜 (-1)和细结构参数| D |化学界240中心点10〜(-4)cm〜(-4)。GaN中Ni〜(3+)的EPR光谱具有S化学界的特征各向异性3/2系统在强轴晶场中。对于具有有效自旋S〜/化学界限的系统,发现有效的G型值为G ||〜/化学界限2.10和垂直的〜/约= 4.20。 2.在GaN和ZnO晶体中的M〜(2 =)和Ni〜(3+)的参数之间揭示了一种类比。1.047 EV的零位线似乎属于转变〜4t_2(f) - 〜 4a_2(f)在Ni〜(3+)离子的3块内,3D〜7电子配置。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号