900 V DMOS and 1100 V UMOS 4H-SiC power FETs

摘要

While the advantages of SiC power MOSFETs (both UMOS and DMOS type structures) are known, processing issues have prevented these devices from reaching commercial systems. We evaluate the 4H-SiC DMOS (DIMOS) structure and the 4H-SiC UMOS structure using experimental results. We have achieved 1.1 kV SiC UMOS devices and 900 V SiC DMOS devices, which represent the highest reported blocking voltages for both devices to date.