A new purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

摘要

A new charge-pumping technique to extract the spatial distribution of hot-carrier-induced interface states and trapped charges in MOS devices is proposed. This method is purely experimental and does not require simulation, and therefore can be applied to any MOSFET without the detailed knowledge of the device's structure. With this method, one is able to gain a better understanding of the degradation mechanisms taking place during hot-carrier stress.