A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems

摘要

The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.