Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

摘要

Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.