Carrier induced partial screening of piezoelectric field in strained InGaAsP based quantum wells grown on (111) substrate

摘要

Theoretically and experimentally, it has been shown that the strained heterostructures grown on polar substrates, which an oriented on axes other than the [100], have piezoelectric fields due to off-diagonal components of strain, and the internal electric fields result in a redshift of the excitonic transitions within the strained heterostructures. Based on this, several groups have demonstrated a tunable blueshift of the absorption edge by modulating the internal fields with an external reverse bias in strained piezoelectric quantum well (QW) diodes. The experimental determination of partial screening of the piezoelectric fields under forward biased current injection has been also demonstrated. In this paper, we report theoretical study of this screening in strained InGaAsP based QW grown on (111) substrate and its gain spectrum under current injection.