Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors

摘要

Metal-semiconductor-metal photodetectors with interdigital electrode patterns are very attractive for applications in ultrafast optoelectronics and electronics such as high-speed switching and signal processing. Here, we shall demonstrate the great potential of ion-implantation for improving the bandwidth of InGaAs MSM photodetectors. The epitaxial layer sequence of the InGaAs MSM photodetector device under study is grown by LP-MOCVD on semi-insulating InP substrates.