Efficiency and threshold current optimization for 850 nm oxidized VCSELs using a mirror etching technique

摘要

Owing to their commercial application to data links, 850 nm VCSELs have been studied extensively to improve the efficiency and reduce the threshold current. However, there are significant tradeoffs that must be made between these two parameters in a VCSEL design. To optimize the VCSELs performance, the DBR design is optimized based on the calculated reflectivity. In this presentation, we report the experimental optimization VCSEL design for a given active region design using mirror etching technique. The data illustrate the design tradeoffs and result in very high performance devices.