The Role of Atomic Hydrogen on the Surface Reaction during the Deposition of Amorphous Silicon

摘要

Hg-sensitized photochemical vapor deposition (photo-CVD) of Si thin films at low temperature using a gas mixture of SiH_4 and H_2 was analyzed, and the concentrations of SiH_3 and H on the growing surface were calculated. The results of the calculation were compared with the properties of the Si thin films, and it was found that the SiH_3 radicals on the growing surface are removed by atomic H and that the variation of the structural properties of Si films are strongly correlated with a ratio of SiH_3 to H.