Optimizing the vertical IGBT structure-the NPT concept as the most economic and electrically ideal solution for a 1200 V-IGBT

摘要

In this paper a new low loss 1200 V IGBT is discussed: optimizing the vertical structure of a fast switching IGBT in economic standard NPT-DMOS-technology, will result (without increase of switching losses) in a lowered on state voltage close to 2 V, a value which until now was believed to be reachable only by implementing problematic trench technology. Key points in this development are improvements in the ability of handling thin wafers below 200 /spl mu/m as well as modifications of the backside p emitter.