X-ray topographic studies of α-SiC single crystalline ingots grown by the sublimation method

摘要

Characterization of single crystalline SiC grown in the [0001] and the [1100] directions by the modified-Lely method has been carried out by x-ray topography. Wafers parallel and perpendicular to the growth direction cut from the grown ingots were examined by transmission topographs of the Lang method. The crystals grown in the [0001] and the [1100] directions showed a large difference in both types and densities of crystal defects. We discuss the relationship between the crystal growth direction and the defect formation in the sublimation growth oi SiC crystals.