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T1 Design of integrated RF front-ends in submicron and deep submicron CMOS technologies

机译:亚微米和深亚微米CMOS技术中集成的RF前端的T1设计

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The design of front-end electronics in CMOS technology are described in this presentation. Both low-voltage/low-power and high performance aspects of front-ends for highly-integrated radio transceivers are treated, using low-noise amplifier, power amplifier driver, mixer and voltage-controlled oscillator blocks as examples. In addition, the limitations and advantages of on-chip passive components in RF circuits, which are important to low-voltage circuits suitable for integration in advanced CMOS technologies, are included. Single-chip narrowband (e.g., Bluetooth, 802.11x), ultrawideband/broadband and multi-standard transceiver applications will be highlighted.
机译:本演示文稿中描述了CMOS技术前端电子设备的设计。使用低噪声放大器,功率放大器驱动器,混频器和电压控制的振荡器块作为示例,处理低压/低功耗和高端前端的高功率和高性能方面。此外,包括在RF电路中的片上无源元件的局限性和优点,这对于适用于高级CMOS技术的低压电路很重要。将突出单芯片窄带(例如,蓝牙,802.11x),超广域带/宽带和多标准收发器应用程序。

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