High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography

摘要

This paper describes the silylation properties and the lithographic performance of ArF (193 nm) surface imaging process with bis(dimethylamino)methylsilane $LB@B(DMA)MS$RB@. The silicon concentration of silylated region with B(DMA)MS in liquid phase is much higher (2 times) than that for the conventional silylation with dimethylsilyldimethylamine (DMSDMA) in vapor phase. The excellent resolution of 0.12 $mu@m L/S and practical DOF (1.0 $mu@m in a range for 0.18 $mu@m L/S) have been achieved using ArF exposure system with a conventional binary mask under a normal illumination. Further, the resolution of 0.088 $mu@m has been obtained with a Levenson-type phase shifting mask.