Hybrid OPC Technique for Fast and Accurate Lithography Simulation

摘要

Hybrid optical proximity correction (OPC) processing approach based on clustering algorithm is proposed, where the localized structures' complexity will drive their respective methodology of OPC, either rule-based (RB) OPC or model-based (MB) OPC. The proposed approach also flags the lithography hotspots from the input design for custom OPC treatments. The effectiveness of the proposed method is verified by simulating few critical layers in advanced technology nodes. Compared to MBOPC approach, the proposed method reduces the overall simulation time by a significant amount, without compromising the desired accuracy limits.