A Combined DOE-ILP Based Power and Read Stability Optimization in Nano-CMOS SRAM

摘要

A novel design approach for simultaneous power and stability (static noise margin, SNM) optimization of nano-CMOS static random access memory (SRAM) is presented. A 45nm single-ended seven transistor SRAM is used as a case study. The SRAM is subjected to a dual-V_(Th) assignment using a novel combined Design of Experiments and Integer Linear Programming (DOE-ILP) algorithm, resulting in 50.6% power reduction (including leakage) and 43.9% increase in the read SNM. The process variation analysis of the optimal SRAM carried out considering twelve device parameters shows the robustness of the design.