Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a 3-inch wafer

摘要

Summary form only given. High-power, 68O nm laser diodes (LD's) with uniform characteristics and 100 /spl mu/m-spaced, 4 element individually addressable LD arrays have been fabricated, for the first time, on a 3-inch GaAs substrate. The LD's have been operating for over 2,000 hours and the elements of the LD arrays have exhibited uniform high-power and high-temperature characteristics.