Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a three-inch /spl phi/ wafer

摘要

The versatile potential of a three-inch diameter wafer processing technology has been successfully demonstrated by the realization of a large number of 680 mn high-power laser diodes (LD's) and their individually addressable four-element arrays on a single wafer at one time. The excellent uniformities of the laser characteristics, such as threshold current, operating current, beam divergences and lasing wavelength have been obtained. The LD's have been operating stably for over 2500 hours under the condition of 60/spl deg/C and 30 mW. In the four-element LD arrays with a junction-up configuration, the linear power-current (P-I) characteristics have been obtained up to 50 mW, even at 50/spl deg/C for each element. Moreover, the thermal crosstalk, defined as the output decrease rate caused by the temperature rise due to neighboring elements operation of 2.9-11.1%, has been realized in the high-power simultaneous operation.