Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology

摘要

Large-scale fabrication processes of high-power single-lateral-mode laser diodes (LDs) have been successfully demonstrated for the first time using 4-inch-wafer process technology. An excellent uniformity of the LD characteristics is obtained over an 88-mm-diameter area of the 4-inch wafer with small deviation, e.g., sigma/ave. = 3.5% (ave. plusmn sigma = 73.5 plusmn 2.6 mA) for the threshold current, and sigma/ave. = 0.12% (658.00 plusmn 0.79 nm) for the peak wavelength. The LDs show stable and kink-free high-power operation over 400 mW even at a high temperature of 75degC with an operation current of 600 mA.