Hydrogen purging during growth interruptions and its effect on electron transport in InP/InGaAs/InP HFETS grown by LP-MOVPE

摘要

InP/InGaAs is a powerful material system for a variety of devices including HFETs. The quality of the heterointerface is very sensitive to growth parameters, especially to the switching sequence of the reactive gases. Improvement of the interface with respect to electron transport was achieved by growth interruptions without group-V stabilization of the surface before growth of the subsequent layer is started.