Growth of pseudomorphic heterostmctures and solid solutions in the AlN-SiC system by plasma-assisted, gas-source molecular beam epitaxy

摘要

Thin epitaxial films of SiC/AlN multilayers and (AlN)_x(SiC)_(1-x) solid solutions have been grown by plasma-assisted, gas-source molecular beam epitaxy between 1050-1300°C using the gas sources of Si_2H_6, C_2H_4 and N_2 decomposed using a compact electron cyclotron resonance plasma source as well as solid Al evaporated from a standard effusion cell on vicinal α(6H)-SiC(0001) substrates. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy revealed monocrystalline layers and pseudomorphic interfacial relationships at the substrate/film and the film/film interfaces.