How far are we from silicon carbide IMPATT diodes for 100-200 GHz?

摘要

The possibility of a SiC IMPATT diode creation is discussed taking into account resent results of theoretical and experimental investigations in silicon carbide. It was predicted numerically that a microwave power generation with a maximum efficiency about 8% is available for the specific input power, P_(in), of 10 MW cm~(-2) at the frequency 140 GHz. A pulse avalanche current with a pulse length about 60 ns, density of 60 kA cm~(-2) and the P_(in) value of 9 MW cm~(-2) was passed through the 6H-SiC pn structures grown by liquid phase epitaxy (LPE).