Proton irradiation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes

摘要

Degradation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Substantial changes in the dark I-V characteristics as well as increases in the dark count rate are observed after irradiation. There are no systematic changes in photon count rate observed or in the amount of after-pulsing. The devices are rendered non-operational following a fluence of 8.1×1010 50-Mev protons/cm2 for room temperature operation.