Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector

摘要

For InGaSb/GaSb strained-layer structure, the effects of elastic strain are induced by lattice mismatch on the effective masses and band offsets at $Gamma@-point. We found that the effective masses (electron, light- and heavy-hole) become anisotropic, and the band offsets are also effected in a strained layer. The E-k relations were calculated using the method of linear combination of atomic orbitals. Such a structure is, at the same time, of type I for heavy-hole and type II for light-hole. Mini-subbands in InGaSb/GaSb strained-layer superlattice have been calculated using the modified Kronig-Penney model. This strained structure can be applied as two-mode transition photoelectronic devices.