Presents a study of commercially available insulated gate bipolar transistors (IGBTs) when subjected to extreme stress. The different types of short-circuit situations. It is evident that different types of short-circuits will stress the IGBT in different ways. This is vital information for the design of short-circuit proof converters using the IGBT. Such a design will require both understanding of the underlying physical mechanisms and adequate testing procedures for the IGBT. To ensure safe operation of these transistors in different short-circuit situations, results from the following safe operating area measurements should be included in the data sheets. Firstly a measurement station the combinations of current, voltage and temperature, which the IGBT can handle at turn-off from full conduction and extreme current levels. Secondly, a measurement stating the combinations of temperature and load which the IGBT can handle at simultaneously high voltage and current.
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