Assembly, method for protection of an insulated gate bipolar transistor against conditions of short circuit and method for protection of at least two insulated gate bipolar transistors connected in series against short circuit conditions

摘要

Assembly, method for protection of an insulated gate bipolar transistor against conditions of short circuit and method for protecting at least two insulated gate bipolar transistors connected in series against short circuit conditions.This is an assembly which includes an insulated gate bipolar transistor (IGBT), an activator of the door and a protection circuit against short circuit. The actuator of the door is adapted to feed a voltage to a terminal of the gate of the IGBT.The protection circuit against short circuit includes a detector for short circuit of IGBT to determine if the IGBT is in short circuit and a power supply voltage regulator to regulate the supply voltage in response to the detection of short circuit of IGBT, which determines that the IGBT Is in short circuit