TEM study of sputter deposited titanium films on silicon and the silicidation reaction during rapid thermal processing

摘要

The microstructure of sputter deposited Ti films on Si is studied. The Ti/Si interface and the texture of the Ti films will be addressed. The C54 TiSi_2 layers, formed from C49 after selective etching and subsequent rapid thermal processing, are investigated. The annealing in a nitrogen ambient results in the formation of TiN precipitates in the surface region of the C54 layers.