Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads.
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机译:开发了两个基于0.1 / SPL MU / M Algaas-Ingaas-GaAs P-HEMT技术的单片W波段的四级LNA。具有整体波导耦合探针的探针已经实现了4.0 dB的噪声系数,增益为30.8dB,94 GHz;另一个增益为31.7 dB,噪声系数为5.9 dB,102 GHz。这是针对单个芯片W波段放大器报告的最高增益。该芯片具有CPW电路元件和用于低成本生产,单极性偏置要求的紧凑型,以及最小的直流键合焊盘。
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