A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier

摘要

A Ka-band four-stage self-biased monolithic low noise amplifier has been developed using a commercial 0.18-A mu m pseudomorphic high electron-mobility transistor (pHEMT) process. For the application of self-bias technique, the low noise amplifier (LNA) is biased from a single power supply rail. The LNA has achieved a broadband performance with a gain of more than 18 dB, a noise figure of less than 3.8 dB in the RF frequency of 26 to 40 GHz. The chip size is 3 x 1 mm(2).