Combined pulsed neutron and flash X-ray radiation effects in GaAs MMICs

摘要

A study was made of combined radiation effects in GaAs MMICs (microwave monolithic integrated circuits) to separate the transient effects of pulsed neutron and gamma radiation GaAs FETs and MMICs were measured in three radiation environments: pulsed neutron, flash X-ray, and combined pulsed neutron and flash X-ray. Synergistic effects were measured under combined pulsed irradiation. Evidence is presented for short-term lattice annealing of pulsed-neutron-induced displacement damage. Specifically, it appears that a small amount of the neutron-induced lattice damage anneals out at room temperature because the drain current recovers strongly at 3 ms and continues to recover out to about 100 ms.