Evaluating the Performances of Memristor, FinFET, and Graphene TFET in VLSI Circuit Design

摘要

There are limitations in CMOS transistor as the technology scales down. The problem of short channel effects (SCE) has become dominant, which causes the malfunction and failure of CMOS circuits. Various devices are proposed to continue extending Moore's law and the roadmap in semiconductor industry. Memristor is a two terminal passive device, which has proven to be compatible with MOSFET microfabrication processes and also offers some distinctive features. It is a nano-dimensional device, so it saves a lot of die area and consumes less power. Similarly, FinFET structure has aided in better electrostatic control of transistor channel. The leakage current and power are reduced, thus, it shows better performance than MOS transistor. FinFET exhibits temperature effect inversion (TEI) because its ION increases even at the superthreshold region. The integration of graphene nanoribbon (GNR) FET into IC design has shown a lot of improvements in terms of speed and power. In this work, we present the characteristics of GNRFET and design an inverter circuit using Cadence/Spectre. Following this, a three-stage ring oscillator (RO) is designed, and the results show that its center frequency is 30.2 GHz with a phase noise of −125.2dBc/Hz. In addition, it consumes 0.15 mW power, which makes it suitable for high frequency and low power applications. More so, the RO has a very good phase noise performance.