Self-aligned silicidation technologies to form a silicide on source/drain and gate regions of MOS devices are receiving increasing interest to reduce the poly-Si line resistance, the contact resistance and the sheet resistance of the diffusion regions, TiSi2 is by far the most widely accepted material for this technology [1]. The aim of this paper is to compare CoSi2 and TiSi2 with respect to various materials/processing aspects and electrical characteristics.
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