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ANALYSIS OF THE EFFECT OF BEAM DIVERGENCE ANGLE ON BACK-STREAMING ELECTRON REGION IN ION SOURCE FOR EAST-NBI

机译:East-Nbi离子源中梁分路角对射流电子区域的影响分析

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During the process of beam extraction in positive ion source under high voltage region, a large number of electrons are produced in the gaps of grids. After back-streaming acceleration, these electrons go back to arc chamber or impinge grids and heat electron dump or grids, which are harmful for the safety of ion source. Under the situation of poor beam extraction optics, a large part of the primary beam ions bombard the surface of suppressor grid. And this process produces a large number of electrons. Due to the huge extracted voltage, the secondary electron emission coefficient of the suppressor grid surface is also great, when beam ions bombard on it. As a result, the grids' current grows. The curvature of ion emission surface and equipotential surface nearby are mainly connected to the perveance and plasma grid geometry. In order to optimize the beam performance of high current ion source and increase the mean arc efficiency, the plasma grid of accelerator is already replaced from circular cross section grid to diamond cross section grid. As a result, the shape of ion emission surface is only connected to the perveance. According the measurement of the current of suppressor grid and the calculation of the perveance of the corresponding shoot, we can analyze the effect of beam divergence angle on back-streaming electron. When the beam divergence angle increases, the number of back-streaming electrons increases rapidly, and grids current changes significantly, especially the current of gradient grid and suppressor grid. The results can guide the parameters operating on the ion source for EAST-NBI and find the reasonable operation interval of perveance and the best one to ensure the safety and stable running of the ion source, which has great significance on the development of long pulse, high power ion source.
机译:在高压区域下的正离子源中的光束提取过程中,在栅格的间隙中产生大量电子。在回流加速之后,这些电子返回到电弧室或冲击栅格和热电子转储或栅格,这对离子源的安全有害。在较差的梁萃取光学器件的情况下,大部分主要光束离子轰击抑制栅格表面。并且该过程产生了大量的电子。由于提取的电压巨大,抑制器栅格表面的二级电子发射系数也很大,当光束离子轰击时也很大。结果,网格的目前的增长。附近的离子发射表面和等电位表面的曲率主要连接到普法切和等离子体网格几何形状。为了优化高电流离子源的光束性能并提高平均电弧效率,从圆形横截面栅格代替了加速器的等离子体网格到金刚石横截面网格。结果,离子发射表面的形状仅连接到术语。根据抑制电网电流的测量和相应拍摄的术语的计算,我们可以分析梁发散角对后流电子的影响。当光束发散角增加时,后流电子的数量迅速增加,并且电流电流显着变化,尤其是梯度电网和抑制网格的电流。结果可以指导在East-NBI的离子源上运行的参数,并找到Perveance合理的操作间隔和最佳,以确保离子源的安全性和稳定运行,这对长脉冲的发展具有重要意义,高功率离子源。

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