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ANALYSIS OF THE EFFECT OF BEAM DIVERGENCE ANGLE ON BACK-STREAMING ELECTRON REGION IN ION SOURCE FOR EAST-NBI

机译:束流发散角对东NBI离子源中反流电子区域的影响分析

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During the process of beam extraction in positive ion source under high voltage region, a large number of electrons are produced in the gaps of grids. After back-streaming acceleration, these electrons go back to arc chamber or impinge grids and heat electron dump or grids, which are harmful for the safety of ion source. Under the situation of poor beam extraction optics, a large part of the primary beam ions bombard the surface of suppressor grid. And this process produces a large number of electrons. Due to the huge extracted voltage, the secondary electron emission coefficient of the suppressor grid surface is also great, when beam ions bombard on it. As a result, the grids' current grows. The curvature of ion emission surface and equipotential surface nearby are mainly connected to the perveance and plasma grid geometry. In order to optimize the beam performance of high current ion source and increase the mean arc efficiency, the plasma grid of accelerator is already replaced from circular cross section grid to diamond cross section grid. As a result, the shape of ion emission surface is only connected to the perveance. According the measurement of the current of suppressor grid and the calculation of the perveance of the corresponding shoot, we can analyze the effect of beam divergence angle on back-streaming electron. When the beam divergence angle increases, the number of back-streaming electrons increases rapidly, and grids current changes significantly, especially the current of gradient grid and suppressor grid. The results can guide the parameters operating on the ion source for EAST-NBI and find the reasonable operation interval of perveance and the best one to ensure the safety and stable running of the ion source, which has great significance on the development of long pulse, high power ion source.
机译:在高压区正离子源的束流提取过程中,在栅隙中产生大量电子。回流加速后,这些电子返回电弧室或撞击栅极并加热电子收集器或栅极,这对离子源的安全有害。在束提取光学器件不良的情况下,大部分初级束离子会轰击抑制器栅格的表面。并且该过程产生大量的电子。由于巨大的提取电压,当束离子轰击时,抑制器栅极表面的二次电子发射系数也很大。结果,网格的电流增大。附近的离子发射表面和等电位表面的曲率主要与磁导率和等离子网格的几何形状有关。为了优化大电流离子源的束流性能并提高平均电弧效率,加速器的等离子栅已从圆形截面栅替换为菱形截面栅。结果,离子发射表面的形状仅与通孔有关。根据抑制栅电流的测量和相应枝条的导通率的计算,我们可以分析束发散角对回流电子的影响。当束发散角增加时,回流电子的数量迅速增加,并且栅极电流显着变化,尤其是梯度栅极和抑制器栅极的电流。结果可以指导EAST-NBI离子源的运行参数,找到合理的运行间隔和确保离子源安全稳定运行的最佳间隔,这对于长脉冲的发展具有重要意义,高功率离子源。

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