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1 VOLT, 1 GHz NEMS SWITCHES

机译:1伏,1 GHz NEMS开关

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It is generally accepted that electromechanical switches have superior off-to-on resistance ratios, very low leakage currents, and sub-threshold slope better than 0.1 mV/decade. It is also well-known that these switches tend to have large foot-print, large turn on voltages, low speeds (at best 0.1 0.01 switching time) and are relatively unreliable and fail due to contact resistance variations, particulates, fatigue, and stiction. Here we present a class of nano-electromechanical switches with -1 V turn-on voltage, very high speed of <1 ns, and very small footprint of around 1 μm~2.
机译:通常接受机电开关具有出色的离外电阻比,极低的漏电流,以及优于0.1 mV /十年的子阈值斜率。还有众所周知,这些开关倾向于具有大的脚印,大的转动电压,低速(最佳0.1 0.01开关时间),并且由于接触电阻变化,颗粒,疲劳和静态而导致的相对不可靠且失效。在这里,我们介绍了一类具有-1V导通电压的纳米机电开关,非常高的<1ns,非常小的占地面积约为1μm〜2。

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