Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO_2 and HfON tunneling layer

摘要

In this paper, the effect of HfON TL of MONOS NVM diode was investigated to improve the memory characteristics. Because of the decreased EOT and suppression of the SiO_2 IL formation, the HfON TL operated at the ±5 V/100 μs of P/E condition which is faster than HfO_2 TL.